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説明:

For applications of single-walled carbon nanotubes (SWNTs) in integrated circuits, it is crucial to have high–tube density arrays of SWNTs that are well aligned and purely semiconducting. In this work, we report on the direct growth of close-packed SWNT arrays on hexagonal boron nitride (hBN) substrates, demonstrating high alignment and uniform chirality within each array. Molecular dynamics simulations suggest that a self-assembly growth mechanism resulted from the intertube van der Waals attraction and the ultralow sliding friction of SWNTs on the atomically flat hBN substrate. Field-effect transistors constructed from the grown SWNT array exhibit high performance at room temperature, with mobilities of up to 2000 square centimeters per volt per second, on/off ratios of ~107, and a maximum current density of ~6 milliamperes per micrometer.

権利情報:

• In Copyright
  

  This is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science on March 21, 2025; DOI: 10.1126/science.adu1756.

キーワード: Single-walled carbon nanotube, Hexagonal boron nitride, Field-effect transistor

刊行年月日: 2025-03-21

出版者: American Association for the Advancement of Science (AAAS)

掲載誌:

• Science (ISSN: 10959203) vol. 387 p. 1310-1316

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1126/science.adu1756

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更新時刻: 2026-07-28 14:12:00 +0900

MDRでの公開時刻: 2026-07-28 16:27:18 +0900