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Description:

Reduction of inhomogeneous stress in diamond is crucially important for extracting excellent performance of semiconducting diamond. In this study, to investigate elastic deformation in nitrogen doped (111) diamond films caused by stress, we evaluated the stress in these films using confocal Raman microscopy. The stress was detectable when the misorientation angle (θ_mis) was below 3.7° and it decreased as θ_mis increased. The Raman spectroscopic measurements, considered together with reported stress measurements by nitrogen-vacancy centers, suggest that the diamond film at low θ_mis was subjected to compressive stresses that were stronger in the [111] direction than [11 ̅0] or [1 ̅1 ̅2] directions.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: nitrogen vacancy center , diamond, stress

Date published: 2024-11-01

Publisher: IOP Publishing

Journal:

• Applied Physics Express (ISSN: 18820778) vol. 17 issue. 11 p. 115502-

Funding:

• Ministry of Internal Affairs and Communications R&D for construction of a global quantum cryptogr
• Japan Society for the Promotion of Science KAKENHI/20H05661
• Ministry of Education, Culture, Sports, Science and Technology Q-LEAP/JPMXS0118067395
• Council for Science, Technology and Innovation SIP “Promoting the application of advanced quant
• Japan Science and Technology Corporation Moonshot R&D (JPMJMS2062)

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.35848/1882-0786/ad88d4

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Updated at: 2025-07-11 08:30:53 +0900

Published on MDR: 2025-07-11 08:16:47 +0900