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説明:

Reduction of inhomogeneous stress in diamond is crucially important for extracting excellent performance of semiconducting diamond. In this study, to investigate elastic deformation in nitrogen doped (111) diamond films caused by stress, we evaluated the stress in these films using confocal Raman microscopy. The stress was detectable when the misorientation angle (θ_mis) was below 3.7° and it decreased as θ_mis increased. The Raman spectroscopic measurements, considered together with reported stress measurements by nitrogen-vacancy centers, suggest that the diamond film at low θ_mis was subjected to compressive stresses that were stronger in the [111] direction than [11 ̅0] or [1 ̅1 ̅2] directions.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: nitrogen vacancy center , diamond, stress

刊行年月日: 2024-11-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 17 issue. 11 p. 115502-

研究助成金:

• Ministry of Internal Affairs and Communications R&D for construction of a global quantum cryptogr
• Japan Society for the Promotion of Science KAKENHI/20H05661
• Ministry of Education, Culture, Sports, Science and Technology Q-LEAP/JPMXS0118067395
• Council for Science, Technology and Innovation SIP “Promoting the application of advanced quant
• Japan Science and Technology Corporation Moonshot R&D (JPMJMS2062)

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1882-0786/ad88d4

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更新時刻: 2025-07-11 08:30:53 +0900

MDRでの公開時刻: 2025-07-11 08:16:47 +0900