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説明:

Tin mono-selenide (SnSe) is one of the high-performance thermoelectric materials, and recent progress has been made in its application to thin-film thermoelectric devices. However, the performance of SnSe polycrystalline and epitaxial films has been limited by their electronic conductivity lower than the single crystal due to strong carrier scattering. In this paper, we investigated the origin of carrier scattering through nanoscale characterization of a-axis oriented SnSe films with different grain boundary (GB) structures (i.e., a-axis misorientations and in-plane rotational GBs).

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsanm.5c00686.

キーワード: tin selenide, thermoelectric material, epitaxial film, carrier transport, defect, density functional theory

刊行年月日: 2025-04-25

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Nano Materials (ISSN: 25740970) vol. 8 issue. 16 p. 8167-8175

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
• Japan Society for the Promotion of Science JP20H00302
• Japan Society for the Promotion of Science JP21H04612
• Japan Society for the Promotion of Science JP22H04964
• Japan Society for the Promotion of Science JP23K23034
• Japan Society for the Promotion of Science JP24H00376
• Japan Society for the Promotion of Science JP24K21671

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5476

公開URL: https://doi.org/10.1021/acsanm.5c00686

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更新時刻: 2025-05-15 08:38:54 +0900

MDRでの公開時刻: 2026-04-11 08:20:04 +0900