International Center for Materials Nanoarchitectonics (WPI-MANA)
(National Institute for Materials Science)
Description:
(abstract)MANA researchers have devised a way to control the carrier density in various materials under high pressure by combining an electric double-layer transistor (EDLT) with a diamond anvil cell (DAC) and applying the resulting EDLT-DAC to thin films.
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In Copyright
Keyword: Electric Double Layer, Field-Effect transistor, High pressure, Diamond, Bi, Ionic liquid
Date published: 2021-03-19
Publisher: National Institute for Materials Science
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Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI: https://doi.org/10.48505/nims.3806
First published URL: https://www.nims.go.jp/mana/research/highlights/vol66.html
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Updated at: 2023-12-26 21:35:16 +0900
Published on MDR: 2022-12-16 13:35:51 +0900
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[Vol. 66]New EDLT-DAC Provides Insights Into High-Pressure Environments_ WPI-MANA.pdf
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Size | 118 KB | Detail |