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Description:

We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of
droplet epitaxy. The C_3v symmetry of the (111)A substrate enabled us to realize highly symmetric
QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with
an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to
room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks.

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• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Neul Ha, Xiangming Liu, Takaaki Mano, Takashi Kuroda, Kazutaka Mitsuishi, Andrea Castellano, Stefano Sanguinetti, Takeshi Noda, Yoshiki Sakuma, Kazuaki Sakoda; Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A. Appl. Phys. Lett. 7 April 2014; 104 (14): 143106 and may be found at https://doi.org/10.1063/1.4870839.

Keyword: InAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Fine Structure Splitting, Telecommunication

Date published: 2014-04-07

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 104 issue. 14 143106

Funding:

• 日本学術振興会 22710107 (GaAs(111)面上高対称性量子ドットの自己形成に関する研究 若手研究(B))
• 日本学術振興会 23340090 (液滴エピタキシーによる高対称量子ドットを用いた電子相関と光子対発生の研究 基盤研究(B))

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/1.4870839

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Updated at: 2025-12-06 12:30:12 +0900

Published on MDR: 2025-12-06 08:34:00 +0900