Article Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions

Keisuke Masuda SAMURAI ORCID (National Institute for Materials Science) ; Yoshio Miura SAMURAI ORCID (National Institute for Materials Science)

PhysRevB.96.054428.pdf
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Keisuke Masuda, Yoshio Miura. Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions. Physical Review B. 2017, 96 (5), 054428.
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(abstract)

スピネルバリアを用いた磁気トンネル接合Fe/MgAl2O4/Feの電圧特性を理論的に解析し、その結果をFe/MgO/Feの電圧特性と比較した。その結果、Fe/MgAl2O4/Feでは電極でのバンド折りたたみが起こるため、磁気抵抗比の電圧耐性がFe/MgO/Feよりも高くなることがわかった。

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Keyword: Tunnel magnetoresistance, Magnetic tunnel junction, Spinel, Spintronics

Date published: 2017-08-21

Publisher: American Physical Society (APS)

Journal:

  • Physical Review B (ISSN: 1550235X) vol. 96 issue. 5 054428

Funding:

  • Ministry of Education, Culture, Sports, Science and Technology 16H06332
  • Ministry of Education, Culture, Sports, Science and Technology 16H03852
  • Council for Science, Technology and Innovation 2014-PM04-17-01

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1103/physrevb.96.054428

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Updated at: 2024-04-11 16:30:40 +0900

Published on MDR: 2024-04-11 16:30:40 +0900

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