Article Study on the effect of Bi/Sr ratio on the device characteristics of high-Tc superconducting terahertz wave emitters made of Bi2Sr2CaCu2O8+δ single crystals

M. Nakayama ; S. Nakagawa ORCID ; T. Yamaguchi ; H. Minami ; K. Kadowaki ORCID ; H. Nakao ORCID ; T. Mochiku SAMURAI ORCID ; M. Tsujimoto ORCID ; S. Ishida ORCID ; H. Eisaki ORCID ; T. Kashiwagi ORCID

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Citation
M. Nakayama, S. Nakagawa, T. Yamaguchi, H. Minami, K. Kadowaki, H. Nakao, T. Mochiku, M. Tsujimoto, S. Ishida, H. Eisaki, T. Kashiwagi. Study on the effect of Bi/Sr ratio on the device characteristics of high-Tc superconducting terahertz wave emitters made of Bi2Sr2CaCu2O8+δ single crystals. Journal of Applied Physics. 2024, 135 (7), . https://doi.org/10.1063/5.0188077
SAMURAI

Description:

(abstract)

To obtain high-performance THz-wave-emitting devices made of single crystals of Bi2Sr2CaCu2O8þδ (Bi2212), a high-temperature super- conductor, an understanding of the device characteristics based on crystal characteristics can be a key issue because, in principle, the electri- cal properties of the intrinsic Josephson junctions (IJJs) constructed in Bi2212 crystals highly depend on crystal conditions, such as carrier concentration, crystal homogeneities, and crystal defects. To evaluate the tendencies of the device characteristics associated with crystal char- acteristics, we prepared Bi2212 crystals with different Bi/Sr ratios (x 1⁄4 0:05, 0.15, and 0.25) and δ values (annealed under N2 or O2 gas flow conditions). The unit cell parameter c decreased as the Bi/Sr ratio or δ increased. For the same annealing conditions under N2 gas flow, the superconducting transition temperature as well as the size of the hysteresis loop of the current–voltage characteristics and emission charac- teristics were significantly suppressed for the sample with x 1⁄4 0:25 compared with the corresponding values for the samples with x 1⁄4 0:05 and 0.15. The experimental results clearly indicate that parameters, such as the Bi/Sr ratio and annealing conditions, are crucial factors in determining the electrical characteristics of a device. This information can be a useful guide for the preparation of crystals for IJJ THz-wave devices that can be fine-tuned according to the desired device characteristics.

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Keyword: high-Tc superconductor, intrinsic Josephson junction, terahertz wave emitter, Bi2Sr2CaCu2O8

Date published: 2024-02-21

Publisher: AIP Publishing

Journal:

  • Journal of Applied Physics (ISSN: 00218979) vol. 135 issue. 7

Funding:

  • Japan Society for the Promotion of Science 17K05018
  • Japan Society for the Promotion of Science 20H02590
  • Japan Society for the Promotion of Science 23H01819

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0188077

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Updated at: 2024-10-10 08:31:04 +0900

Published on MDR: 2024-10-10 08:31:04 +0900

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