M. Nakayama
;
S. Nakagawa
;
T. Yamaguchi
;
H. Minami
;
K. Kadowaki
;
H. Nakao
;
T. Mochiku
;
M. Tsujimoto
;
S. Ishida
;
H. Eisaki
;
T. Kashiwagi
説明:
(abstract)To obtain high-performance THz-wave-emitting devices made of single crystals of Bi2Sr2CaCu2O8þδ (Bi2212), a high-temperature super- conductor, an understanding of the device characteristics based on crystal characteristics can be a key issue because, in principle, the electri- cal properties of the intrinsic Josephson junctions (IJJs) constructed in Bi2212 crystals highly depend on crystal conditions, such as carrier concentration, crystal homogeneities, and crystal defects. To evaluate the tendencies of the device characteristics associated with crystal char- acteristics, we prepared Bi2212 crystals with different Bi/Sr ratios (x 1⁄4 0:05, 0.15, and 0.25) and δ values (annealed under N2 or O2 gas flow conditions). The unit cell parameter c decreased as the Bi/Sr ratio or δ increased. For the same annealing conditions under N2 gas flow, the superconducting transition temperature as well as the size of the hysteresis loop of the current–voltage characteristics and emission charac- teristics were significantly suppressed for the sample with x 1⁄4 0:25 compared with the corresponding values for the samples with x 1⁄4 0:05 and 0.15. The experimental results clearly indicate that parameters, such as the Bi/Sr ratio and annealing conditions, are crucial factors in determining the electrical characteristics of a device. This information can be a useful guide for the preparation of crystals for IJJ THz-wave devices that can be fine-tuned according to the desired device characteristics.
権利情報:
キーワード: high-Tc superconductor, intrinsic Josephson junction, terahertz wave emitter, Bi2Sr2CaCu2O8
刊行年月日: 2024-02-21
出版者: AIP Publishing
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1063/5.0188077
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-10-10 08:31:04 +0900
MDRでの公開時刻: 2024-10-10 08:31:04 +0900
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