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Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a V_BG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels. Such unique switching allows for the implementation of a convolutional neural network immune to external noise, in which the quantized Hall conductance levels of the Chern insulator device are used as weights. Our study provides a promising avenue toward development of the topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials.

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• In Copyright
  This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41565-024-01698-y

Keyword: Topological edge states, Interfacial ferroelectricity, Chern insulator

Date published: 2024-07-04

Publisher: Springer Science and Business Media LLC

Journal:

• Nature Nanotechnology (ISSN: 17483395) vol. 19 issue. 7 p. 962-969

Funding:

• National Natural Science Foundation of China 62034004
• National Natural Science Foundation of China 61921005
• National Natural Science Foundation of China 12322407
• National Natural Science Foundation of China 12074176
• National Natural Science Foundation of China 62122036

Manuscript type: Author's version (Accepted manuscript)

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First published URL: https://doi.org/10.1038/s41565-024-01698-y

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Updated at: 2025-09-05 16:30:34 +0900

Published on MDR: 2025-09-05 16:19:25 +0900