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We demonstrate data writing and shifting processes in a double-free-layer nanopillar with perpendicular magnetic anisotropy. For the data writing process, the magnetization of the lower free layer is switched by injecting in-plane current pulses into the Pt bottom electrode to generate spin-orbit torque. The written information, i.e., the magnetization direction of the lower free layer, is subsequently transferred to the upper free layer through spin-transfer torque by injecting out-of-plane current pulses into the nanopillar. Furthermore, we verify that this write-and-shift memory operation can be achieved from different initial magnetization states.

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  © 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keyword: domain wall motion memory, 3D memory, spin-orbit torque, spin-transfer torque, magnetization switching

Date published: 2025-03-31

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Journal:

• IEEE Transactions on Magnetics (ISSN: 00189464) p. 1-1

Funding:

• Japan Science and Technology Agency JPMJFS2123
• Ministry of Education, Culture, Sports, Science and Technology JPJ011438
• Japan Science and Technology Agency JPMJCR21C1

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5403

First published URL: https://doi.org/10.1109/tmag.2025.3556016

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Updated at: 2025-04-03 12:30:12 +0900

Published on MDR: 2025-04-03 14:09:15 +0900