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We demonstrate data writing and shifting processes in a double-free-layer nanopillar with perpendicular magnetic anisotropy. For the data writing process, the magnetization of the lower free layer is switched by injecting in-plane current pulses into the Pt bottom electrode to generate spin-orbit torque. The written information, i.e., the magnetization direction of the lower free layer, is subsequently transferred to the upper free layer through spin-transfer torque by injecting out-of-plane current pulses into the nanopillar. Furthermore, we verify that this write-and-shift memory operation can be achieved from different initial magnetization states.

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• In Copyright
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Keyword: domain wall motion memory, 3D memory, spin-orbit torque, spin-transfer torque, magnetization switching

Date published: 2025-03-31

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Journal:

• IEEE Transactions on Magnetics (ISSN: 00189464) p. 1-1

Funding:

• Japan Science and Technology Agency JPMJCR21C1
• Japan Science and Technology Agency JPMJFS2123
• Ministry of Education, Culture, Sports, Science and Technology JPJ011438

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5403

First published URL: https://doi.org/10.1109/tmag.2025.3556016

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Updated at: 2025-04-03 10:29:28 +0900

Published on MDR: 2025-04-03 14:09:15 +0900