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Resonant tunneling, with energy and momentum conservation, has been extensively studied in two-dimensional van der Waals heterostructures and has potential applications in band structure probing, multivalued logic, and oscillators. Lattice alignment is crucial in resonant tunneling transistors (RTTs) for achieving negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) because twist-angle-induced momentum mismatch can break the resonant tunneling condition. Here, we report anisotropic resonant tunneling in twist-stacked ReSe2/h-BN/ReSe2 RTTs, where the PVR exhibits a strong dependence on the twist angle between the two ReSe2 layers, reaching a maximum at the twist angle of 102°. Theoretical calculations suggest that the twist angle modulates the joint density of states of the two anisotropic bands in ReSe2 layers during the tunneling process, significantly suppressing the valley current and thereby enhancing the PVR. Double NDR peaks were observed in twist-stacked RTTs, which are attributed to interband resonant tunneling. Moreover, our twist-stacked RTTs are utilized in multibit inverters and adjustable self-powered photodetectors, providing potentials for the design of high-performance RTTs and photodetectors via twist-stacked engineering.

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  This document is the Accepted Manuscript version of a Published Article that appeared in final form in ACS Nano, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsnano.4c13215.

Keyword: Resonant tunneling transistor (RTT), Negative differential resistance (NDR), van der Waals heterostructure

Date published: 2025-03-18

Publisher: American Chemical Society (ACS)

Journal:

• ACS Nano (ISSN: 1936086X) vol. 19 issue. 10 p. 9826-9834

Funding:

• National Key Research and Development Program of China 2022YFA1203900
• National Natural Science Foundation of China 12104050
• National Natural Science Foundation of China 62375018
• Beijing Institute of Technology Research Fund Program for Young Scholars

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1021/acsnano.4c13215

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Updated at: 2026-07-06 09:34:44 +0900

Published on MDR: 2026-07-06 12:30:05 +0900