ジャーナル論文 Anisotropic Resonant Tunneling in Twist-Stacked van der Waals Heterostructure
Dan Guo (author) (この著者で検索)
;
Huiwen Wang (author) (この著者で検索)
;
Liu Yang (author) (この著者で検索)
;
Weikang Dong (author) (この著者で検索)
;
Boyu Xu (author) (この著者で検索)
;
Shuang Du (author) (この著者で検索)
;
Xuyan Rui (author) (この著者で検索)
;
Qingrong Liang (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
ORCID SAMURAI ;
Takashi Taniguchi (author) (この著者で検索)
ORCID SAMURAI ;
Zhiwei Wang (author) (この著者で検索)
;
Yan Xiong (author) (この著者で検索)
;
Wei Jiang (author) (この著者で検索)
;
Jiadong Zhou (author) (この著者で検索)
;
Shoujun Zheng (author) (この著者で検索)
コレクション

引用
Dan Guo, Huiwen Wang, Liu Yang, Weikang Dong, Boyu Xu, Shuang Du, Xuyan Rui, Qingrong Liang, Kenji Watanabe, Takashi Taniguchi, Zhiwei Wang, Yan Xiong, Wei Jiang, Jiadong Zhou, Shoujun Zheng. Anisotropic Resonant Tunneling in Twist-Stacked van der Waals Heterostructure. ACS Nano. 2025, 19 (10), 9826-9834. https://doi.org/10.1021/acsnano.4c13215

説明:

(abstract)

Resonant tunneling, with energy and momentum conservation, has been extensively studied in two-dimensional van der Waals heterostructures and has potential applications in band structure probing, multivalued logic, and oscillators. Lattice alignment is crucial in resonant tunneling transistors (RTTs) for achieving negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) because twist-angle-induced momentum mismatch can break the resonant tunneling condition. Here, we report anisotropic resonant tunneling in twist-stacked ReSe2/h-BN/ReSe2 RTTs, where the PVR exhibits a strong dependence on the twist angle between the two ReSe2 layers, reaching a maximum at the twist angle of 102°. Theoretical calculations suggest that the twist angle modulates the joint density of states of the two anisotropic bands in ReSe2 layers during the tunneling process, significantly suppressing the valley current and thereby enhancing the PVR. Double NDR peaks were observed in twist-stacked RTTs, which are attributed to interband resonant tunneling. Moreover, our twist-stacked RTTs are utilized in multibit inverters and adjustable self-powered photodetectors, providing potentials for the design of high-performance RTTs and photodetectors via twist-stacked engineering.

権利情報:

  • In Copyright

    This document is the Accepted Manuscript version of a Published Article that appeared in final form in ACS Nano, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsnano.4c13215.

キーワード: Resonant tunneling transistor (RTT), Negative differential resistance (NDR), van der Waals heterostructure

刊行年月日: 2025-03-18

出版者: American Chemical Society (ACS)

掲載誌:

  • ACS Nano (ISSN: 1936086X) vol. 19 issue. 10 p. 9826-9834

研究助成金:

  • National Key Research and Development Program of China 2022YFA1203900
  • National Natural Science Foundation of China 12104050
  • National Natural Science Foundation of China 62375018
  • Beijing Institute of Technology Research Fund Program for Young Scholars

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acsnano.4c13215

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更新時刻: 2026-07-06 09:34:44 +0900

MDRでの公開時刻: 2026-07-06 12:30:05 +0900

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