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A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot grown by droplet epitaxy.
Coincidence histograms obtained at a temperature of 10 K reveal the generation of quantum entangled pairs that have a fidelity to the Bell pairs of 0.7160.015, much beyond the classical limit. We study the temperature dependent device characteristics and estimate the
maximum operation temperature to be ~ 65 K, which is essentially limited by the weak charge carrier confinement in the present dot system. Our study offers a guideline for the fabrication of quantum entangled pair sources suitable for practical use.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Neul Ha, Takaaki Mano, Takashi Kuroda, Yoshiki Sakuma, Kazuaki Sakoda; Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A. Appl. Phys. Lett. 19 August 2019; 115 (8): 083106 and may be found at https://doi.org/10.1063/1.5103217.

Keyword: GaAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Fine Structure Splitting, Electroluminescence

Date published: 2019-08-19

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 115 issue. 8 083106

Funding:

• 日本学術振興会 25390011 (液滴エピタキシー法による理想的な量子ドットの自己形成 基盤研究(C))

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/1.5103217

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Updated at: 2025-12-06 12:30:15 +0900

Published on MDR: 2025-12-06 08:34:00 +0900