Article Anisotropic below bandgap harmonic generation in β-gallium oxide

Mukhtar Hussain ORCID ; André Mesquita Antunes ; Gonçalo Vaz ORCID ; Joana Alves ORCID ; Hugo Pires ORCID ; Tayyab Imran ORCID ; Marco Peres ; Katharina Lorenz ; Encarnación Víllora ; Kiyoshi Shimamura SAMURAI ORCID ; Saibabu Madas ; Mousumi Upadhyay Kahaly ; Subhendu Kahaly ORCID ; Gonçalo Figueira ORCID ; Marta Fajardo ; Gareth Williams

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Mukhtar Hussain, André Mesquita Antunes, Gonçalo Vaz, Joana Alves, Hugo Pires, Tayyab Imran, Marco Peres, Katharina Lorenz, Encarnación Víllora, Kiyoshi Shimamura, Saibabu Madas, Mousumi Upadhyay Kahaly, Subhendu Kahaly, Gonçalo Figueira, Marta Fajardo, Gareth Williams. Anisotropic below bandgap harmonic generation in β-gallium oxide. Optics Express. 2024, 32 (26), 47296-47305. https://doi.org/10.1364/oe.525696
SAMURAI

Description:

(abstract)

Harmonic generation in wide bandgap semiconductors and dielectrics has attracted
a surge of interest as a compact solid-state light source and as a method of mapping the band
structure of the material itself. Longer driving wavelengths can support longer electron trajectories
and suppress interband transitions, yielding spectra sensitive to crystal orientation and band
shapes. Here, we combine a long wavelength laser to drive harmonic generation in a wide
band-gap material with applications in photonics and power electronics, beta-gallium oxide
(β-Ga2O3). We generate harmonics up to the ninth order (H9=3.7 eV) in air, with a ≈ 3.0 μm,
100 kHz, 40 fs mid-infrared (MIR) driving laser in (100) and (010) oriented single crystals of
β-Ga2O3. We observe odd and even harmonics, spectral interference, and the strong anisotropic
response of both odd and even harmonics to the incident laser polarization. Our results are
explained in terms of the electronic structure and macroscopic optical properties of β-Ga2O3.

Rights:

Keyword: β-Ga2O3, Harmonic generation in wide bandgap semiconductors

Date published: 2024-12-16

Publisher: Optica Publishing Group

Journal:

  • Optics Express (ISSN: 10944087) vol. 32 issue. 26 p. 47296-47305

Funding:

  • Fundação para a Ciência e a Tecnologia PD/BD/135224/2017
  • Fundação para a Ciência e a Tecnologia UIDB/50010/2020
  • Ministerstvo Školství, Mládeže a Tělovýchovy 90254
  • Fundação para a Ciência e a Tecnologia 2022.00804 CEECIND
  • Fundação para a Ciência e a Tecnologia 2022.05329.PTDC
  • Fundação para a Ciência e a Tecnologia 2022.09213.PTDC
  • European Commission GINOP-2.3.6-15-2015-00001
  • Fundação para a Ciência e a Tecnologia LA/P/0061/202
  • Fundação para a Ciência e a Tecnologia PD/BD/135177/2017

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1364/oe.525696

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Updated at: 2024-12-20 16:30:44 +0900

Published on MDR: 2024-12-20 16:30:44 +0900

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