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説明:

Harmonic generation in wide bandgap semiconductors and dielectrics has attracted
a surge of interest as a compact solid-state light source and as a method of mapping the band
structure of the material itself. Longer driving wavelengths can support longer electron trajectories
and suppress interband transitions, yielding spectra sensitive to crystal orientation and band
shapes. Here, we combine a long wavelength laser to drive harmonic generation in a wide
band-gap material with applications in photonics and power electronics, beta-gallium oxide
(β-Ga2O3). We generate harmonics up to the ninth order (H9=3.7 eV) in air, with a ≈ 3.0 μm,
100 kHz, 40 fs mid-infrared (MIR) driving laser in (100) and (010) oriented single crystals of
β-Ga2O3. We observe odd and even harmonics, spectral interference, and the strong anisotropic
response of both odd and even harmonics to the incident laser polarization. Our results are
explained in terms of the electronic structure and macroscopic optical properties of β-Ga2O3.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: β-Ga2O3, Harmonic generation in wide bandgap semiconductors

刊行年月日: 2024-12-16

出版者: Optica Publishing Group

掲載誌:

• Optics Express (ISSN: 10944087) vol. 32 issue. 26 p. 47296-47305

研究助成金:

• Fundação para a Ciência e a Tecnologia PD/BD/135224/2017
• Fundação para a Ciência e a Tecnologia UIDB/50010/2020
• Ministerstvo Školství, Mládeže a Tělovýchovy 90254
• Fundação para a Ciência e a Tecnologia 2022.00804 CEECIND
• Fundação para a Ciência e a Tecnologia 2022.05329.PTDC
• Fundação para a Ciência e a Tecnologia 2022.09213.PTDC
• European Commission GINOP-2.3.6-15-2015-00001
• Fundação para a Ciência e a Tecnologia LA/P/0061/202
• Fundação para a Ciência e a Tecnologia PD/BD/135177/2017

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1364/oe.525696

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更新時刻: 2024-12-20 16:30:44 +0900

MDRでの公開時刻: 2024-12-20 16:30:44 +0900