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In recent years, advancements in semiconductor manufacturing technology have enabled the formation of high-quality, high-mobility two-dimensional electron gases in zinc oxide (ZnO) heterostructures, making the electrostatic formation of quantum dots possible. ZnO, with its low natural abundance of isotopes possessing nuclear spin and its direct bandgap, is considered a
potentially suitable material for quantum bit applications. In this study, we achieve the formation of triple quantum dots and the realization of a few-electron state in ZnO heterostructure devices. We also confirm that by varying the gate voltage between the quantum dots, it is possible to control the interdot spacing. Additionally, we observe a tunneling phenomenon called a
quantum cellular automata effect, where multiple electrons move simultaneously, which is not seen in single or double quantum dots, due to Coulomb interactions. Our results demonstrate that ZnO nanostructures have reached a level where they can function as controllable multiple quantum dot systems.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Quantum dot

Date published: 2025-10-21

Publisher: Springer Science and Business Media LLC

Journal:

• Scientific Reports (ISSN: 20452322) vol. 15 issue. 1 36612

Funding:

• Japan Society for the Promotion of Science

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41598-025-20567-9

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Updated at: 2025-10-24 08:30:21 +0900

Published on MDR: 2025-10-24 08:18:42 +0900