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In recent years, advancements in semiconductor manufacturing technology have enabled the formation of high-quality, high-mobility two-dimensional electron gases in zinc oxide (ZnO) heterostructures, making the electrostatic formation of quantum dots possible. ZnO, with its low natural abundance of isotopes possessing nuclear spin and its direct bandgap, is considered a
potentially suitable material for quantum bit applications. In this study, we achieve the formation of triple quantum dots and the realization of a few-electron state in ZnO heterostructure devices. We also confirm that by varying the gate voltage between the quantum dots, it is possible to control the interdot spacing. Additionally, we observe a tunneling phenomenon called a
quantum cellular automata effect, where multiple electrons move simultaneously, which is not seen in single or double quantum dots, due to Coulomb interactions. Our results demonstrate that ZnO nanostructures have reached a level where they can function as controllable multiple quantum dot systems.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Quantum dot

刊行年月日: 2025-10-21

出版者: Springer Science and Business Media LLC

掲載誌:

• Scientific Reports (ISSN: 20452322) vol. 15 issue. 1 36612

研究助成金:

• Japan Society for the Promotion of Science

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41598-025-20567-9

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更新時刻: 2025-10-24 08:30:21 +0900

MDRでの公開時刻: 2025-10-24 08:18:42 +0900