Journal article Resolving polarization switching pathways of sliding ferroelectricity in trilayer 3R-MoS2
Jing Liang (author) (Search by this author)
;
Dongyang Yang (author) (Search by this author)
;
Jingda Wu (author) (Search by this author)
;
Yunhuan Xiao (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Jerry I. Dadap (author) (Search by this author)
;
Ziliang Ye (author) (Search by this author)
Collection

Citation
Jing Liang, Dongyang Yang, Jingda Wu, Yunhuan Xiao, Kenji Watanabe, Takashi Taniguchi, Jerry I. Dadap, Ziliang Ye. Resolving polarization switching pathways of sliding ferroelectricity in trilayer 3R-MoS2. Nature Nanotechnology. 2025, 20 (4), 500-506. https://doi.org/10.1038/s41565-025-01862-y

Description:

(abstract)

Sliding ferroelectricity, an emerging type of hysteretic behaviour with strong potential for memory-related applications, involves dynamically switching the polarization associated with the stacking arrangement in two-dimensional van der Waals materials. Because different stacking configurations can share a degenerate net polarization, it has remained a challenge to resolve the intermediate stacking configuration and the polarization switching pathway in multi-interface devices. In this work, we present an optical approach to resolve the polarization degeneracy in a trilayer 3R-MoS2 over different switching cycles. By performing reflection contrast spectroscopy in dual-gated devices, we identify distinct responses of inter- and intralayer excitons in all four possible stacking configurations (ABC, ABA, BAB and CBA). Diffraction-limited spatial resolution makes it possible to image the switching of the stacking configurations. We find that the switching pathway is influenced not only by the competition among pinning centres—which localize domain walls at different interfaces—but also by a free-carrier screening effect linked to chemical doping. These findings highlight the importance of managing domain walls, pinning centres and doping levels in sliding ferroelectric devices, offering insights for further development in sensing and computing applications.

Rights:

  • In Copyright

    This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41565-025-01862-y.

Keyword: Sliding ferroelectricity, Trilayer MoS2, Reflection contrast spectroscopy

Date published: 2025-02-03

Publisher: Springer Science and Business Media LLC

Journal:

  • Nature Nanotechnology (ISSN: 17483395) vol. 20 issue. 4 p. 500-506

Funding:

  • Canada Foundation for Innovation
  • Canada First Research Excellence Fund
  • Canada Research Chairs
  • Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
  • Max Planck–UBC–UTokyo Centre for Quantum Materials
  • MEXT | Japan Society for the Promotion of Science

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1038/s41565-025-01862-y

Related item:

Other identifier(s):

Contact agent:

Updated at: 2026-07-03 15:09:39 +0900

Published on MDR: 2026-07-03 16:29:23 +0900

Filename Size
Filename 2025A00616G_manuscript_trilayer_pathway_arxiv.pdf (Thumbnail)
application/pdf
Size 1.43 MB Detail