説明:
(abstract)Sliding ferroelectricity, an emerging type of hysteretic behaviour with strong potential for memory-related applications, involves dynamically switching the polarization associated with the stacking arrangement in two-dimensional van der Waals materials. Because different stacking configurations can share a degenerate net polarization, it has remained a challenge to resolve the intermediate stacking configuration and the polarization switching pathway in multi-interface devices. In this work, we present an optical approach to resolve the polarization degeneracy in a trilayer 3R-MoS2 over different switching cycles. By performing reflection contrast spectroscopy in dual-gated devices, we identify distinct responses of inter- and intralayer excitons in all four possible stacking configurations (ABC, ABA, BAB and CBA). Diffraction-limited spatial resolution makes it possible to image the switching of the stacking configurations. We find that the switching pathway is influenced not only by the competition among pinning centres—which localize domain walls at different interfaces—but also by a free-carrier screening effect linked to chemical doping. These findings highlight the importance of managing domain walls, pinning centres and doping levels in sliding ferroelectric devices, offering insights for further development in sensing and computing applications.
権利情報:
This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41565-025-01862-y.
キーワード: Sliding ferroelectricity, Trilayer MoS2, Reflection contrast spectroscopy
刊行年月日: 2025-02-03
出版者: Springer Science and Business Media LLC
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研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI:
公開URL: https://doi.org/10.1038/s41565-025-01862-y
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更新時刻: 2026-07-03 15:09:39 +0900
MDRでの公開時刻: 2026-07-03 16:29:23 +0900
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2025A00616G_manuscript_trilayer_pathway_arxiv.pdf
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