LingNan Wei
;
Qiaoling Xu
;
Yangchen He
;
Qingxin Li
;
Yan Huang
;
Wang Zhu
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Martin Claassen
;
Daniel A. Rhodes
;
Dante M. Kennes
;
Lede Xian
;
Angel Rubio
;
Lei Wang
Description:
(abstract)Different mechanisms driving a linear temperature dependence of the resistivity at van Hove singularities (VHSs) or metal-insulator transitions when doping a Mott insulator are being debated intensively with competing theoretical proposals. We experimentally investigate this using the exceptional tunability of twisted bilayer (TB-) WSe2 by tracking the parameter regions where linear-in-T resistivity is found in dependency of displacement fields, filling, and magnetic fields. We find that even when the VHSs are tuned rather far away from the half-filling point and the Mott insulating transition is absent, the T-linear resistivity persists at the VHSs. When doping away from the VHSs, the T-linear behavior quickly transitions into a Fermi liquid behavior with a T2 relation. No apparent dependency of the linear-in-T resistivity, besides a rather strong change of prefactor, is found when applying displacement fields as long as the filling is tuned to the VHSs, including D~ 0.28 V/nm where a higher order VHS is expected. Intriguingly, such non-Fermi liquid linear-in-T resistivity persists even when magnetic fields break the spin-degeneracy of the VHSs at which point two linear in T regions emerge, for each of the split VHSs separately. This points to a mechanism of enhanced scattering at generic VHSs rather than only at high-order VHSs or by a quantum critical point during a Mott transition. Our findings provide insights into the many-body consequences arising out of VHSs, especially the non-Fermi liquid behavior found in moiré materials.
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Keyword: Resistivity, van Hove singularities, twisted bilayer WSe2
Date published: 2024-04-16
Publisher: Proceedings of the National Academy of Sciences
Journal:
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Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1073/pnas.2321665121
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Updated at: 2025-02-23 22:46:54 +0900
Published on MDR: 2025-02-23 22:46:54 +0900
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