論文 Linear resistivity at van Hove singularities in twisted bilayer WSe 2

LingNan Wei ; Qiaoling Xu ; Yangchen He ; Qingxin Li ; Yan Huang ; Wang Zhu ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Martin Claassen ; Daniel A. Rhodes ; Dante M. Kennes ; Lede Xian ; Angel Rubio ; Lei Wang

コレクション

引用
LingNan Wei, Qiaoling Xu, Yangchen He, Qingxin Li, Yan Huang, Wang Zhu, Kenji Watanabe, Takashi Taniguchi, Martin Claassen, Daniel A. Rhodes, Dante M. Kennes, Lede Xian, Angel Rubio, Lei Wang. Linear resistivity at van Hove singularities in twisted bilayer WSe 2. Proceedings of the National Academy of Sciences. 2024, 121 (16), e2321665121. https://doi.org/10.1073/pnas.2321665121
SAMURAI

説明:

(abstract)

Different mechanisms driving a linear temperature dependence of the resistivity at van Hove singularities (VHSs) or metal-insulator transitions when doping a Mott insulator are being debated intensively with competing theoretical proposals. We experimentally investigate this using the exceptional tunability of twisted bilayer (TB-) WSe2 by tracking the parameter regions where linear-in-T resistivity is found in dependency of displacement fields, filling, and magnetic fields. We find that even when the VHSs are tuned rather far away from the half-filling point and the Mott insulating transition is absent, the T-linear resistivity persists at the VHSs. When doping away from the VHSs, the T-linear behavior quickly transitions into a Fermi liquid behavior with a T2 relation. No apparent dependency of the linear-in-T resistivity, besides a rather strong change of prefactor, is found when applying displacement fields as long as the filling is tuned to the VHSs, including D~ 0.28 V/nm where a higher order VHS is expected. Intriguingly, such non-Fermi liquid linear-in-T resistivity persists even when magnetic fields break the spin-degeneracy of the VHSs at which point two linear in T regions emerge, for each of the split VHSs separately. This points to a mechanism of enhanced scattering at generic VHSs rather than only at high-order VHSs or by a quantum critical point during a Mott transition. Our findings provide insights into the many-body consequences arising out of VHSs, especially the non-Fermi liquid behavior found in moiré materials.

権利情報:

キーワード: Resistivity, van Hove singularities, twisted bilayer WSe2

刊行年月日: 2024-04-16

出版者: Proceedings of the National Academy of Sciences

掲載誌:

  • Proceedings of the National Academy of Sciences (ISSN: 10916490) vol. 121 issue. 16 e2321665121

研究助成金:

  • National Science Foundation of Jiangsu Province BK20220066
  • National Key Research and Development Program of China 2022YFA1403501
  • Guandong Basic and Applied Basic Research Foundation 2022B1515120020
  • Hefei National Research Center for Physical Sciences at the Microscale KF2021003
  • Max Planck Partner group programme -
  • Max Planck-New York City Center for Non-Equilibrium Quantum Phenomena -
  • University of Wisconsin-Madison, Office of the Vice Chancellor for Research and Graduate Education -
  • JSPS KAKENHI 21H05233 and 23H02052
  • National Natural Science Foundation of china 12074173
  • Deutsche Forschungsgemeinschaft EXC 2004/1 - 390534769

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1073/pnas.2321665121

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更新時刻: 2025-02-23 22:46:54 +0900

MDRでの公開時刻: 2025-02-23 22:46:54 +0900

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