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説明:

The nanosized boron vacancy (V−B) defect spot in hexagonal boron nitride (h-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that a helium-ion microscope can make a spot at any location in an h-BN flake with nanometer accuracy. In this study, we investigate the properties of the created nanosized V−B defect spots by systematically varying three conditions: the helium-ion dose, the thickness of the h-BN flakes, and the substrate on which the h-BN flakes are attached. The physical background of the results obtained is successfully interpreted using Monte Carlo calculations. From the findings obtained here, a guideline for their optimal creation conditions is obtained to maximize its performance as a quantum sensor concerning sensitivity and localization.

権利情報:

• http://arxiv.org/licenses/nonexclusive-distrib/1.0/
  

キーワード: quantum sensor, hexagonal boron nitride, helium ion microscopy

刊行年月日: 2024-11-12

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Applied (ISSN: 23317019) vol. 22 issue. 5 054026

研究助成金:

• JST
• CREST JPMJCR23I2
• Grants-in-Aid for Scientific Research JP24KJ0692
• Grants-in-Aid for Scientific Research JP24KJ0880
• Grants-in-Aid for Scientific Research JP23K25800
• Grants-in-Aid for Scientific Research JP22K03524
• Grants-in-Aid for Scientific Research JP22KJ1059
• Grants-in-Aid for Scientific Research JP19H00656
• Grants-in-Aid for Scientific Research JP19H05826
• Grants-in-Aid for Scientific Research 21H05233
• Grants-in-Aid for Scientific Research 23H02052
• Ministry of Education, Culture, Sports, Science and Technology of Japan
• Mitsubishi Foundation 202310021
• Advanced Research Infrastructure for Materials and Nanotechnology in Japan JPMXP1222UT1131
• JSR Fellowship

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevapplied.22.054026

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更新時刻: 2025-01-09 16:30:55 +0900

MDRでの公開時刻: 2025-01-09 16:30:55 +0900