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We developed a reconfigurable ternary logic-in-memory (LIM) device based on an organic antiambipolar transistor and incorporating a gold floating gate into a hafnium oxide (HfO2) gate insulator. First, a standard ternary inverter was obtained with extremely low input and drain voltages (2 V) owing to the high dielectric constant of the HfO2 gate insulator. Three distinct output logic states (“2,” “1,” and “0”) were clearly obtained for the corresponding input logic states (“0,” “1,” and “2”). Then, the voltage transfer curve was laterally shifted up to 1.8 V by controlling the hole- and electron-injection processes into the floating gate, obtaining a ternary nonvolatile memory. This memory function realized versatile reconfigurable ternary inverter operations. Three ternary inverters, namely, standard, negative, and positive ternary inverters, were demonstrated in a single LIM device. Remarkably, these inverter operations were performed using the same input voltages and then electrically reconfigured by adjusting the charge condition (i.e., holes or electrons) of the floating gate. Our development seems promising for performing multivalued in-memory computing toward surpassing the capabilities of existing von Neumann systems.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: reconfigurable ternary inverter, logic-in-memory, antiambipolar transistor, floating gate

刊行年月日: 2026-08-20

出版者: Wiley

掲載誌:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 12 issue. 19 e70538

研究助成金:

• National Institute for Materials Science
• Japan Society for the Promotion of Science 19H00866
• Japan Society for the Promotion of Science 23H00269
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5158
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1225NM5099
• Acquisition, Technology & Logistics Agency (ATLA) JPJ004596

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/aelm.70538

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更新時刻: 2026-10-15 14:42:52 +0900

MDRでの公開時刻: 2026-10-15 16:29:41 +0900