Article Electrically Switching Ferroelectric Order in 3R-MoS2 Layers

Tianyi Ouyang ; Soonyoung Cha ; Yiyang Sun ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Nathaniel M. Gabor ; Chun Hung Lui

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Tianyi Ouyang, Soonyoung Cha, Yiyang Sun, Takashi Taniguchi, Kenji Watanabe, Nathaniel M. Gabor, Chun Hung Lui. Electrically Switching Ferroelectric Order in 3R-MoS2 Layers. Nano Letters. 2025, 25 (4), 1459-1465. https://doi.org/10.1021/acs.nanolett.4c05370

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(abstract)

Transition metal dichalcogenides (TMDs) with rhombohedral (3R) stacking order are excellent platforms to realize multi-ferroelectricity. In this work, we demonstrate the electrical switching of ferroelectric orders in bilayer, trilayer, and tetralayer 3R-MoS2 dual-gate devices by examining their reflection and photoluminescence (PL) responses under sweeping out-of-plane electric fields. We observe sharp shifts in excitonic spectra at different critical fields with pronounced hysteresis. These phenomena are attributed to distinct interlayer polarizations resulting from specific lateral displacements between the layers, with each configuration yielding a unique ferroelectric state. Our findings indicate two, three and four ferroelectric regimes for bilayer, trilayer, and tetralayer structures, respectively, in agreement with theoretical prediction. Moreover, each polarization state can be stabilized at zero applied electric field. The tunable ferroelectric phases of these multilayers pave the way for innovative applications in non-volatile memory, logic circuits, and optoelectronic devices.

Rights:

Keyword: ferroelectric order
, 3R-MoS2
, electrical switching

Date published: 2025-01-29

Publisher: American Chemical Society (ACS)

Journal:

  • Nano Letters (ISSN: 15306984) vol. 25 issue. 4 p. 1459-1465

Funding:

  • Air Force Office of Scientific Research FA9550-20-1-0097
  • Japan Society for the Promotion of Science 19H05790
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 21H05233
  • Division of Materials Research 1945660
  • Army Research Office Electronics Division W911NF2110260

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1021/acs.nanolett.4c05370

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Updated at: 2026-02-17 08:30:50 +0900

Published on MDR: 2026-02-16 18:00:51 +0900

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