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説明:

Transition metal dichalcogenides (TMDs) with rhombohedral (3R) stacking order are excellent platforms to realize multi-ferroelectricity. In this work, we demonstrate the electrical switching of ferroelectric orders in bilayer, trilayer, and tetralayer 3R-MoS2 dual-gate devices by examining their reflection and photoluminescence (PL) responses under sweeping out-of-plane electric fields. We observe sharp shifts in excitonic spectra at different critical fields with pronounced hysteresis. These phenomena are attributed to distinct interlayer polarizations resulting from specific lateral displacements between the layers, with each configuration yielding a unique ferroelectric state. Our findings indicate two, three and four ferroelectric regimes for bilayer, trilayer, and tetralayer structures, respectively, in agreement with theoretical prediction. Moreover, each polarization state can be stabilized at zero applied electric field. The tunable ferroelectric phases of these multilayers pave the way for innovative applications in non-volatile memory, logic circuits, and optoelectronic devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: ferroelectric order
, 3R-MoS2
, electrical switching

刊行年月日: 2025-01-29

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 25 issue. 4 p. 1459-1465

研究助成金:

• Air Force Office of Scientific Research FA9550-20-1-0097
• Japan Society for the Promotion of Science 19H05790
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233
• Division of Materials Research 1945660
• Army Research Office Electronics Division W911NF2110260

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.4c05370

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更新時刻: 2026-02-17 08:30:50 +0900

MDRでの公開時刻: 2026-02-16 18:00:51 +0900