Journal article Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
Kazuki Koreishi (author) (Search by this author)
ORCID https://orcid.org/0009-0000-1580-8262 (unauthenticated)
ORCID ; ORCID SAMURAI ;
Takuto Soma (author) (Search by this author)
ORCID https://orcid.org/0000-0001-8685-9606 (unauthenticated)
ORCID ;
Kohei Yoshimatsu (author) (Search by this author)
ORCID https://orcid.org/0000-0001-9288-068X (unauthenticated)
ORCID ;
Akira Ohtomo (author) (Search by this author)
ORCID https://orcid.org/0000-0003-0300-4712 (unauthenticated)
ORCID
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Kazuki Koreishi, Kodai Niitsu, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo. Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap. Applied Physics Letters. 2026, 129 (1), 012102. https://doi.org/10.1063/5.0326523

Description:

(abstract)

Bandgap engineering of β-Ga2O3 is essential for advancing its electronic and optoelectronic
applications. However, the growth of high-quality heteroepitaxial structures is often hampered by
large lattice mismatches. In this study, we design (AlxScyGa1−x−y)2O3 quaternary alloys in the form of both polycrystalline powders and heteroepitaxial films and demonstrate their lattice matching to β15 Ga2O3. Powder x-ray diffraction (XRD) measurements reveal that the lattice parameters of monoclinic(AlxScyGa0.8)2O3 match those of β-Ga2O3 when x/y = 1.5–3.2. (AlxScyGa1−x−y)2O3 thin films are grown on β-Ga2O3 (100) substrates by pulsed-laser deposition by varying the composition ratio x/y and the total substitutional fraction x + y. Nearly perfect lattice-matched epilayers with uniform composition and crystal structure are obtained up to x + y ~ 0.6, as confirmed by XRD and scanning transmission electron microscopy. Electron energy loss spectroscopy reveals a tunable bandgap from 4.5 to 5.8 eV. These results demonstrate that (AlxScyGa1−x−y)2O3/β-Ga2O3 heterostructures are promising platforms for ultrawide-bandgap semiconductor devices.

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  • In Copyright

    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Kazuki Koreishi, Kodai Niitsu, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo; Lattice-matched (AlxScyGa1−x−y)2O3/β-Ga2O3 heterostructures with widely tunable bandgap. Appl. Phys. Lett. 6 July 2026; 129 (1): 012102 and may be found at https://doi.org/10.1063/5.0326523.

Keyword: Ga2O3, Wide bandgap, Bandgap engineering

Date published: 2026-07-06

Publisher: AIP Publishing

Journal:

  • Applied Physics Letters (ISSN: 00036951) vol. 129 issue. 1 012102

Funding:

  • Japan Society for the Promotion of Science JP21H02026
  • Ministry of Education, Culture, Sports, Science and Technology JPMXS0420900524
  • Japan Society for the Promotion of Science JP25K01663
  • Japan Society for the Promotion of Science JP22H04505
  • Japan Society for the Promotion of Science JP24H00480
  • Precursory Research for Embryonic Science and Technology JPMJPR22Q3
  • Precursory Research for Embryonic Science and Technology JPMJPR22Q6
  • Support for Pioneering Research Initiated by the Next Generation JPMJSP2180

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6446

First published URL: https://doi.org/10.1063/5.0326523

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Updated at: 2026-08-06 09:39:59 +0900

Published on MDR: 2026-08-06 12:26:57 +0900

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