Journal article Emergence of superconductivity in Th 3 P 4 -type Sn 3 Se 4 and Ge 3 S 4 under high pressure synthesized by diamond anvil cell with boron-doped diamond electrodes
Ryo Matsumoto (author) (Search by this author)
ORCID SAMURAI ;
Satoshi Nakano (author) (Search by this author)
ORCID SAMURAI ;
Kensei Terashima (author) (Search by this author)
ORCID SAMURAI ;
Toru Shinmei (author) (Search by this author)
;
Tetsuo Irifune (author) (Search by this author)
;
Motoharu Imai (author) (Search by this author)
ORCID SAMURAI ;
Yoshihiko Takano (author) (Search by this author)
ORCID SAMURAI
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Citation
Ryo Matsumoto, Satoshi Nakano, Kensei Terashima, Toru Shinmei, Tetsuo Irifune, Motoharu Imai, Yoshihiko Takano. Emergence of superconductivity in Th 3 P 4 -type Sn 3 Se 4 and Ge 3 S 4 under high pressure synthesized by diamond anvil cell with boron-doped diamond electrodes. Science and Technology of Advanced Materials. 2026, 27 (1), 2705815. https://doi.org/10.1080/14686996.2026.2705815

Description:

(abstract)

Emergence of superconductivity in Th 3 P 4 -type Sn 3 Se 4 and Ge 3 S 4 under high pressure synthesized by diamond anvil cell with boron-doped diamond electrodesについて

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Keyword: High pressure, superconductivity, diamond

Date published: 2026-12-31

Publisher: Informa UK Limited

Journal:

  • Science and Technology of Advanced Materials (ISSN: 14686996) vol. 27 issue. 1 2705815

Funding:

  • JSPS KAKENHI 23H01835, 23K13549, 23KK0088, 25K01508
  • JST K Program JPMJKP25Z2
  • Advanced Research Infrastructure for Materials and Nanotechnology in Japan JPMXP1225NM5218
  • World Premier International Research Center Initiative (WPI), MEXT, Japan

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1080/14686996.2026.2705815

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Updated at: 2026-08-25 15:57:43 +0900

Published on MDR: 2026-08-25 18:24:44 +0900