Highly efficient lateral spin valve device based on graphene/hBN/Fe<sub>3</sub>GeTe<sub>2</sub>

Jan Bärenfänger; Klaus Zollner; Lukas Cvitkovich; Kenji Watanabe; Takashi Taniguchi; Stefan Hartl; Jaroslav Fabian; Jonathan Eroms; Dieter Weiss; Mariusz Ciorga

doi:10.1088/2053-1583/adf453

論文 Highly efficient lateral spin valve device based on graphene/hBN/Fe₃GeTe₂

Jan Bärenfänger ; Klaus Zollner ; Lukas Cvitkovich ; Kenji Watanabe (National Institute for Materials Science) ; Takashi Taniguchi (National Institute for Materials Science) ; Stefan Hartl ; Jaroslav Fabian ; Jonathan Eroms ; Dieter Weiss ; Mariusz Ciorga

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Jan Bärenfänger, Klaus Zollner, Lukas Cvitkovich, Kenji Watanabe, Takashi Taniguchi, Stefan Hartl, Jaroslav Fabian, Jonathan Eroms, Dieter Weiss, Mariusz Ciorga. Highly efficient lateral spin valve device based on graphene/hBN/Fe₃GeTe₂. 2D Materials. 2025, 12 (4), 045008. https://doi.org/10.1088/2053-1583/adf453

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In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in non-local transport in a stack of Fe3GeTe2 (FGT), hexagonal boron nitride (hBN) and graphene layers. FGT flakes form the spin aligning electrodes necessary to inject and detect spins in the graphene channel. The hBN tunnel barrier provides a high-quality interface between the ferromagnetic electrodes and graphene, eliminating the conductivity mismatch problem, thus ensuring efficient spin injection and detection with spin injection efficiencies of up to P = 40 %. Our results demonstrate that FGT/hBN/graphene heterostructures form a promising platform for realizing 2D van der Waals spintronic devices.

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