Atomic-scale observation of native oxides on
                    <i>c</i>
                    - and
                    <i>m</i>
                    -faced GaN surfaces

Jun Uzuhashi; Yoshihiro Irokawa; Toshihide Nabatame; Yasuo Koide; Tadakatsu Ohkubo

doi:10.1063/5.0322514

Article Atomic-scale observation of native oxides on c - and m -faced GaN surfaces

Jun Uzuhashi ; Yoshihiro Irokawa ; Toshihide Nabatame ; Yasuo Koide ; Tadakatsu Ohkubo

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Jun Uzuhashi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Tadakatsu Ohkubo. Atomic-scale observation of native oxides on c - and m -faced GaN surfaces. AIP Advances. 2026, 16 (4), 045004. https://doi.org/10.1063/5.0322514

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Controlling the dielectric/semiconductor interfaces is essential for the development of semiconductor power devices. Gallium nitride (GaN) has attracted significant attention as a next-generation semiconductor owing to its superior properties; however, controlling the dielectric/GaN interface remains a critical challenge unlike silicon (Si). In this study, we observed native oxides formed on both the c-face and m-face GaN surfaces after simple air exposure using scanning transmission electron microscopy. Oxygen diffusion into Si crystal was significantly suppressed by the formation of a SiOx layer; on the other hand, gradual oxygen diffusion (Ga-N-O layer) with ~ 2.0 nm depths into the GaN crystal was observed. Remarkably, 1.5 times larger amount oxygen was incorporated in the m-face than in the c-face GaN. These findings provide key insights into the control of dielectric/GaN interfaces and may facilitate the development of GaN-based power devices.

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