Journal article Quantum Light Generation with Ultra‐High Spatial Resolution in 2D Semiconductors via Ultra‐Low Energy Electron Irradiation
Ajit Kumar Dash (author) (Search by this author)
;
Sharad Kumar Yadav (author) (Search by this author)
;
Sebastien Roux (author) (Search by this author)
;
Manavendra Pratap Singh (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Akshay Naik (author) (Search by this author)
;
Cedric Robert (author) (Search by this author)
;
Xavier Marie (author) (Search by this author)
;
Akshay Singh (author) (Search by this author)
Collection

Citation
Ajit Kumar Dash, Sharad Kumar Yadav, Sebastien Roux, Manavendra Pratap Singh, Kenji Watanabe, Takashi Taniguchi, Akshay Naik, Cedric Robert, Xavier Marie, Akshay Singh. Quantum Light Generation with Ultra‐High Spatial Resolution in 2D Semiconductors via Ultra‐Low Energy Electron Irradiation. Advanced Functional Materials. 2025, 35 (27), 2421684. https://doi.org/10.1002/adfm.202421684

Description:

(abstract)

Single photon emitters (SPEs) are building blocks of quantum technologies. Defect engineering of two-dimensional (2D) materials is ideal to fabricate SPEs, wherein spatially deterministic and quality-preserving fabrication methods are critical for integration into quantum devices and cavities. Existing methods use combination of strain and electron irradiation, or ion irradiation, which make fabrication complex, and limited by surrounding lattice damage. Here, only ultra-low energy electron beam (e-beam) irradiation (5 keV) is utilized to create dilute defect density in hBN-encapsulated monolayer MoS2, with ultra-high spatial resolution (<50 nm, extendable to 10 nm). Cryogenic photoluminescence spectra exhibit sharp defect peaks, following power-law for finite density of single defects, and characteristic Zeeman splitting for MoS2 defect complexes. The sharp peaks have low spectral jitter (<200 µeV), and are tunable with gate-voltage and e-beam energy. Use of low-momentum electron irradiation, ease of processing, and high spatial resolution, will disrupt deterministic creation of high-quality SPEs.

Rights:

  • In Copyright

    This is the peer reviewed version of the following article: A. K. Dash, S. K. Yadav, S. Roux, M. P. Singh, K. Watanabe, T. Taniguchi, A. Naik, C. Robert, X. Marie, A. Singh, Quantum Light Generation with Ultra-High Spatial Resolution in 2D Semiconductors via Ultra-Low Energy Electron Irradiation. Adv. Funct. Mater.2025, 35, 2421684, which has been published in final form at https://doi.org/10.1002/adfm.202421684. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

Keyword: Single photon emitters, Two-dimensional materials, Electron beam irradiation

Date published: 2025-02-16

Publisher: Wiley

Journal:

  • Advanced Functional Materials (ISSN: 16163028) vol. 35 issue. 27 2421684

Funding:

  • Agence Nationale de la Recherche ANR‐21‐ESRE‐ 0025
  • Agence Nationale de la Recherche ATOEMS
  • Agence Nationale de la Recherche IXTASE

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1002/adfm.202421684

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Updated at: 2026-07-03 13:53:43 +0900

Published on MDR: 2026-07-03 16:29:23 +0900

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