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CoSn kagome metal is a pseudo-one-dimensional electronic conductor, exhibiting low
resistivity (ρ) along the [0001] direction (c-axis) and significantly higher ρ along other
crystallographic directions. Such anisotropic conduction is expected to mitigate resistivity
increases in narrow interconnect wires at advanced semiconductor technology process nodes,
making CoSn a promising candidate for future interconnect applications. In this study, CoSn
thin films were fabricated by magnetron sputtering, and their resistivity anisotropy was
investigated with respect to crystallographic orientation. Epitaxial growth of single-crystalline
CoSn (101ത0) films was achieved on a Ru (101ത0) buffer layer at deposition temperatures above
350 °C. The CoSn films exhibited relatively low ρ along [0001], reaching 13 µΩ cm for films
thicker than 50 nm, and an approximately tenfold anisotropy of ρ between [0001] and [2-1-10]
(a-axis), consistent with previous reports on bulk CoSn single crystals. However, the CoSn(10-10) surface exhibited pronounced roughness, attributed to three-dimensional crystal growth during sputtering, which hinders accurate evaluation of the thickness dependence of resistivity. Scanning transmission electron microscopy revealed the growth of a CoSn (10-10) single-crystal with (11-20) and (01-10) side wall facets, as well as domain boundaries within the films. These results highlight both the potential and challenges of employing CoSn kagome metal in future interconnect technologies.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Tomoya Nakatani, Nattamon Suwannaharn, Taisuke T. Sasaki; Fabrication and characterization of single-crystalline CoSn kagome metal thin films for interconnect applications: Structure and anisotropic electrical resistivity. Appl. Phys. Lett. 17 November 2025; 127 (20): 203302 and may be found at https://doi.org/10.1063/5.0298962.

Keyword: interconnect, semiconductor, kagome, epitaxial, resistivity

Date published: 2025-11-17

Publisher: American Institute of Physics

Journal:

• APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 127 issue. 20

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5993

First published URL: https://doi.org/10.1063/5.0298962

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Updated at: 2025-12-11 12:30:21 +0900

Published on MDR: 2025-12-11 12:24:34 +0900