Article Iptycene-Assisted Alignment of Chirality-Sorted SWCNTs for Field-Effect Transistors

Monika R. Snowdon ORCID ; Ekaterina V. Sukhanova ORCID ; Zakhar I. Popov ORCID ; Shisheng Li ; Leanddas Nurdiwijayanto ORCID ; Takaaki Taniguchi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Shinsuke Ishihara SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takeshi Tanaka ORCID ; Hiromichi Kataura ORCID ; Kazuhito Tsukagoshi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Robert L. F. Liang ORCID ; Marina Freire-Gormaly ; Derek J. Schipper ORCID ; Dmitry G. Kvashnin ORCID ; Dai-Ming Tang SAMURAI ORCID (National Institute for Materials ScienceROR)

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Citation
Monika R. Snowdon, Ekaterina V. Sukhanova, Zakhar I. Popov, Shisheng Li, Leanddas Nurdiwijayanto, Takaaki Taniguchi, Shinsuke Ishihara, Takeshi Tanaka, Hiromichi Kataura, Kazuhito Tsukagoshi, Robert L. F. Liang, Marina Freire-Gormaly, Derek J. Schipper, Dmitry G. Kvashnin, Dai-Ming Tang. Iptycene-Assisted Alignment of Chirality-Sorted SWCNTs for Field-Effect Transistors. ACS Applied Nano Materials. 2025, 8 (2), 944-951. https://doi.org/10.1021/acsanm.4c04305

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(abstract)

Single-walled carbon nanotubes (SWCNTs) are ideal channel materials candidates for energy-efficient nanoscale transistors; however, it is challenging to achieve uniform alignment of semiconducting SWCNTs with homogeneous chirality. Here, we report the proof-of-concept of using organized chirality-sorted SWCNTs via the alignment relay technique (ART), where iptycene molecules order the nanotubes through π-π interactions. Top gated field-effect transistors (FETs) were fabricated with aligned (10,3) chirality SWCNTs as channels to show an ION of 3.8 µA, an ION/IOFF ratio of 2.9×106, and a carrier mobility of 10.08 cm2/Vs, which is enhanced by two magnitudes of order compared with a bundled SWCNTs network channel. In addition, ART was applied to align commercially available semiconducting SWCNTs to fabricate a chemiresistive gas sensor that showed prompt detection of 4 ppm ammonia (NH3) with a sensitivity of 0.43 ± 0.04 %/ppm, demonstrating a general approach to align SWCNTs for applications in electronic devices.

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  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsanm.4c04305

Keyword: carbon nanotubes, chirality, transistors, sensors

Date published: 2025-01-17

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Applied Nano Materials (ISSN: 25740970) vol. 8 issue. 2 p. 944-951

Funding:

  • Fusion Oriented REsearch for disruptive Science and Technology JPMJFR223T
  • Japan Society for the Promotion of Science JP20H05668
  • Japan Society for the Promotion of Science JP20K05281
  • Japan Society for the Promotion of Science JP23H01796
  • Japan Society for the Promotion of Science JP24K01282
  • Japan Society for the Promotion of Science JP25820336
  • National Institute for Materials Science JPMXP1224NM5238
  • Natural Sciences and Engineering Research Council of Canada
  • Russian Ministry of Science and Higher Education 122041400110-4

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5305

First published URL: https://doi.org/10.1021/acsanm.4c04305

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Updated at: 2025-01-29 13:15:40 +0900

Published on MDR: 2026-01-07 08:24:31 +0900

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