Doped interlayers enabling high-mobility p-type organic transistors with copper contact electrodes

Aoi Morimoto; Yu Yamashita; Taiki Sawada; Masaki Ishii; Shun Watanabe; Jun Takeya

doi:10.1039/d5tc01775k

Journal article Doped interlayers enabling high-mobility p-type organic transistors with copper contact electrodes

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Aoi Morimoto, Yu Yamashita, Taiki Sawada, Masaki Ishii, Shun Watanabe, Jun Takeya. Doped interlayers enabling high-mobility p-type organic transistors with copper contact electrodes. Journal of Materials Chemistry C. 2025, 13 (34), 17544-17550. https://doi.org/10.1039/d5tc01775k

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Thin-film single crystals of organic semiconductors (OSCs) enable simple and low-cost fabrication of high-mobility organic field-effect transistors (OFETs) via solution processing. However, injection barriers in OFETs limit material selection and device performance. Researchers typically use high-work-function noble metals as contact electrodes for p-type OFETs owing to transport levels well below −5.0 eV for ambient stable OSCs. This raises questions regarding the economic and environmental advantages of OSC based printed electronics. This study demonstrates high-mobility OFETs with copper contact electrodes using doped interlayers. A poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) interlayer was laminated on the OSC single crystals. The PTAA interlayer was chemically doped using aqueous doping solutions, followed by evaporation of copper contact electrodes. Our OFET showed a proper p-type operation with a mobility of 5.0 cm2V−1 s−1 and onoff ratio of approximately 104. This is in contrast to the case without the doped interlayer showing poor performance and a low mobility of 0.2 cm2V−1 s−1. This study provides new opportunities for designing devices with a high performance, low cost, and material sustainability.

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