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説明:

Magnetic Heusler alloys are highly attractive for spintronics; however, realizing their full potential requires high-temperature annealing, which is often incompatible with practical device fabrication. Excimer laser annealing (ELA) potentially addresses this temperature constraint by making use of the short annealing time and temperature gradient along the depth direction. We investigated the effect of ELA on Co2Mn0.5Fe0.5Ge half-metallic Heusler-alloy thin films and demonstrated that ELA successfully induces crystallization and B2 atomic ordering. Optimized ELA condition using low fluence with a high number of laser irradiations achieved reduced resistivity and negative anisotropic magnetoresistance, indicating improved atomic ordering and high spin polarization, while maintaining flatness of the films. These findings establish ELA as a viable annealing method for integrating high-performance Heusler alloys into the device structure with strict thermal budget. Moreover, ELA offers additional advantages such as enhanced throughput and selective area annealing, thereby broadening the scope of Heusler-alloy applications in spintronic devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Spintronics, Laser annealing, Heusler alloys, Half-metals, Thin films

刊行年月日: 2026-02-28

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 139 issue. 8 083903

研究助成金:

• Advanced Storage Research Consortium
• MEXT ARIM JPMXP1225NM5220
• MEXT X-NICS JPJ011438

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0304815

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更新時刻: 2026-04-20 16:22:04 +0900

MDRでの公開時刻: 2026-04-20 18:24:56 +0900