Ayaz Ali
;
Matthias Schrade
;
Wen Xing
;
Per Erik Vullum
;
Ozhan Koybasi
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Branson D. Belle
Description:
(abstract)Integrated logic circuits using atomically thin, two-dimensional (2D) materials offer several potential advantages compared to established silicon technologies such as increased transistor density, circuit complexity, and lower energy dis- sipation leading to scaling benefits. In this article, a novel approach to achieve tunable doping in 2D semiconductors is explored to achieve complementary transistors and logic integration. By selectively transferring WSe2 onto hBN and SiO2 substrates, complementary transistor behavior (n- and p-type) was achieved using a UV light source and electrostatic activation. Furthermore, advanced characterization techniques, including high-resolution transmission electron microscopy (HRTEM) and Kelvin probe force microscopy (KPFM), provided insights into the chemical composition and surface potential changes after UV writing. Finally, a logic inverter was successfully implemented using selectively photo-induced doped WSe2 transistors, showcasing the potential for practical logic applications. This innovative method opens new avenues for designing energy-efficient and reconfigurable 2D semiconductor circuits, addressing key challenges in modern electronics.
Rights:
Keyword: Integrated logic circuits, 2D semiconductors, complementary transistors
Date published: 2024-03-01
Publisher: Wiley
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1002/smsc.202300319
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Updated at: 2025-02-23 22:46:04 +0900
Published on MDR: 2025-02-23 22:46:05 +0900
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Small Science - 2024 - Ali - Two‐Dimensional Heterostructure Complementary Logic Enabled by Optical Writing.pdf
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