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説明:

Integrated logic circuits using atomically thin, two-dimensional (2D) materials offer several potential advantages compared to established silicon technologies such as increased transistor density, circuit complexity, and lower energy dis- sipation leading to scaling benefits. In this article, a novel approach to achieve tunable doping in 2D semiconductors is explored to achieve complementary transistors and logic integration. By selectively transferring WSe2 onto hBN and SiO2 substrates, complementary transistor behavior (n- and p-type) was achieved using a UV light source and electrostatic activation. Furthermore, advanced characterization techniques, including high-resolution transmission electron microscopy (HRTEM) and Kelvin probe force microscopy (KPFM), provided insights into the chemical composition and surface potential changes after UV writing. Finally, a logic inverter was successfully implemented using selectively photo-induced doped WSe2 transistors, showcasing the potential for practical logic applications. This innovative method opens new avenues for designing energy-efficient and reconfigurable 2D semiconductor circuits, addressing key challenges in modern electronics.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Integrated logic circuits, 2D semiconductors, complementary transistors

刊行年月日: 2024-03-01

出版者: Wiley

掲載誌:

• Small Science (ISSN: 26884046) vol. 4 issue. 5 2300319

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology
• Norges Forskningsråd 295864
• Norges Forskningsråd 280788
• Norges Forskningsråd 197405
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 23H02052
• Higher Education Commision, Pakistan 20‐14470/NRPU/R&D/HEC/2021

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/smsc.202300319

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更新時刻: 2025-02-23 22:46:04 +0900

MDRでの公開時刻: 2025-02-23 22:46:05 +0900