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This study explores α-MgAgSb through various ball milling techniques aimed at investigating its crystal structure, microstructure, electronic, thermal transport properties, and thermoelectric performance. By systematically adjusting milling conditions, we controlled grain size, leading to enhanced charge carrier mobility, reduced resistivity, and improved performance of α-MgAgSb. We found that impurity phases hinder the grain growth of α-MgAgSb, especially in the case of the secondary phase Ag3Sb, thereby reducing carrier mobility. The low-temperature resistivity analysis presented in this study reveals distinct scattering mechanisms based on impurity levels and carrier mobility, providing a deeper insight into the fundamental electronic interactions of α-MgAgSb, which have not been comprehensively addressed in earlier works. The α-MgAgSb with lower Sb content predominantly exhibit electron-electron scattering, while higher impurity levels introduce both electron-electron and electron-phonon scattering, influencing carrier mobility. Additionally, thermal conductivity analysis using three Effective Medium Theory (EMT) methods illustrates how the distribution of Ag3Sb increases interfacial resistance. The maximum zT value of 1.36 at 473 K was observed in a compound with α-MgAgSb to Sb ratio of 99% to 1%. This study illustrates how variations in synthesis methods influence microstructural characteristics such as grain size and impurity phases, and significantly impact thermoelectric performance via transport mechanisms.

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• In Copyright
  

Keyword: thermoelectric

Date published: 2025-01-11

Publisher: Elsevier BV

Journal:

• Journal of Materials Science & Technology (ISSN: 10050302) vol. 227 p. 57-66

Funding:

• Japan Science and Technology Agency
• JST-Mirai Program JPMJMI19A1

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5980

First published URL: https://doi.org/10.1016/j.jmst.2024.11.061

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Updated at: 2025-12-10 16:30:04 +0900

Published on MDR: 2025-12-10 16:25:18 +0900