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説明:

Semiconductor moire ́ systems, characterized by their periodic spatial light emission, unveil a new paradigm of active metasurfaces. Here, we show that ferroelectric moire ́ domains formed in a twisted hexagonal boron nitride (t-hBN) substrate can modulate light emission from an adjacent semiconductor MoSe2 monolayer, enhancing its functionality as an active metasurface. The electrostatic potential at the surface of the t-hBN substrate provides a simple way to confine excitons in the MoSe2 monolayer. The excitons confined within the domains and at the domain walls are spectrally separated due to a pronounced Stark shift. Moreover, the patterned light emission can be dynamically controlled by electrically gating the ferroelectric domains, introducing a novel functionality beyond conventional semiconductor moire ́ systems. Our findings chart an exciting pathway for integrating nanometer- scale moire ́ ferroelectric domains with various optically active functional layers, paving the way for advanced nanophotonic applications.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

キーワード: moiré ferroelectricity
, light emission modulation, semiconductor monolayer


刊行年月日: 2025-05-09

出版者: American Association for the Advancement of Science (AAAS)

掲載誌:

• Science Advances (ISSN: 23752548) vol. 11 issue. 19 eadt7789

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1126/sciadv.adt7789

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更新時刻: 2026-04-03 13:17:35 +0900

MDRでの公開時刻: 2026-04-03 16:27:43 +0900