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For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping, whilst keeping high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene in contact with an anti-ferromagnetic insulator CrOCl, a strong insulating behavior is observed in a wide range of positive total electron doping ntot and effective displacement field Deff at low temperatures. Transport measurements further prove that such an insulating phase can be well described by the picture of an inter-layer excitonic state in bilayer graphene owing to electron-hole interactions. The consequential over 1 GΩ excitonic insulator can be readily killed by tuning Deff and/or ntot, and the system recovers to a high mobility graphene with a sheet resistance of less than 100 Ω. It thus yields transistors with "ON-OFF" ratios reaching 10^7, and a CMOS-like graphene logic inverter is demonstrated. Our findings of the robust insulating phase in bilayer graphene may be a leap forward to fertilize the future carbon computing.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Graphene gapped states, CrOCl, electron-electron interactions

Date published: 2023-04-14

Publisher: Springer Science and Business Media LLC

Journal:

• Nature Communications (ISSN: 20411723) vol. 14 issue. 1 2136

Funding:

• National Natural Science Foundation of China 92265203

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41467-023-37769-2

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Updated at: 2025-02-15 12:30:48 +0900

Published on MDR: 2025-02-15 12:30:48 +0900