Daniel Vaquero
;
Vito Clericò
;
Michael Schmitz
;
Juan Antonio Delgado-Notario
;
Adrian Martín-Ramos
;
Juan Salvador-Sánchez
;
Claudius S. A. Müller
;
Km Rubi
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Bernd Beschoten
;
Christoph Stampfer
;
Enrique Diez
;
Mikhail I. Katsnelson
;
Uli Zeitler
;
Steffen Wiedmann
;
Sergio Pezzini
Description:
(abstract)The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport mechanism, where dissipation in the QH regime is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.
Rights:
Keyword: Quantum Hall effect, graphene, electron-phonon scattering
Date published: 2023-01-19
Publisher: Springer Science and Business Media LLC
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/s41467-023-35986-3
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Other identifier(s):
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Updated at: 2025-02-15 12:31:14 +0900
Published on MDR: 2025-02-15 12:31:14 +0900
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