プロシーディングス論文 Smart-cut-assisted fabrication of ultrathin diamond NEMS cantilevers
Guo Chen (author) (この著者で検索)
ORCID https://orcid.org/0009-0004-9263-5616 (unauthenticated)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID ;
Wen Zhao (author) (この著者で検索)
ORCID https://orcid.org/0000-0001-8159-8195 (unauthenticated)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID ;
Zhaozong Zhang (author) (この著者で検索)
ORCID https://orcid.org/0009-0003-8745-4469 (unauthenticated)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID ;
Satoshi Koizumi (author) (この著者で検索)
ORCID https://orcid.org/0000-0003-4961-5658
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Meiyong Liao (author) (この著者で検索)
ORCID https://orcid.org/0000-0003-1361-4266
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI
コレクション

引用
Guo Chen, Wen Zhao, Zhaozong Zhang, Satoshi Koizumi, Meiyong Liao. Smart-cut-assisted fabrication of ultrathin diamond NEMS cantilevers. https://doi.org/10.48505/nims.8663

説明:

(abstract)

Ultrathin single-crystal diamond (SCD) cantilevers are highly promising for nanoelectromechanical systems (NEMS) because they combine nanoscale dimensions with exceptional mechanical robustness, low dissipation, and thermal stability. However, the reliable fabrication of sub-100 nm diamond cantilevers remains challenging. Here, we report a smart-cut-assisted thinning strategy for fabricating ultrathin diamond NEMS cantilevers with thicknesses down to ~50 nm.
As illustrated in Figure 1(a), the fabrication process starts from a microscale diamond cantilever, followed by sequential O2 etching to the submicron scale and reactive ion etching (RIE) thinning to the nanoscale cantilever region. This two-step thinning process enables controlled thickness reduction while preserving structural integrity. The fabricated devices exhibit well-defined cantilever geometries, as confirmed by the three-dimensional (3D) surface profile in Figure 1(b), showing a representative cantilever with a length of 60 µm, width of 8 µm, and thickness of ~50 nm. The surface quality of the diamond epilayer is further verified by the AFM image in Figure 1(c), which reveals a smooth morphology with a root-mean-square (RMS) roughness of 1.7 nm, indicating that the thinning process preserves good surface quality, which is important for minimizing surface-related dissipation in ultrathin NEMS devices.
The fabricated ultrathin cantilevers also demonstrate stable resonant behavior. As shown in Figure 1(d), Allan deviation analysis gives a minimum value of 4.9×10-6 at a bandwidth of 1 Hz, confirming good frequency stability of the ~50 nm-thick cantilever. Based on the mass-sensing relation, the minimum detectable mass reaches 6.16 × 10-19 kg. These results demonstrate that the smart-cut-assisted thinning strategy provides a reliable route for batch fabrication of ultrathin diamond NEMS cantilevers, establishing a promising platform for high-performance nanomechanical sensing.

権利情報:

キーワード: Diamond, MEMS

刊行年月日:

出版者:

掲載誌:

会議: 36th International Conference on Diamond and Carbon Materials (ICDCM 2026) (2026-08-30 - 2026-09-03)

研究助成金:

原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.8663

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更新時刻: 2026-10-16 10:58:21 +0900

MDRでの公開時刻: 2026-10-16 12:33:05 +0900

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