Article Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer

Abigail J. Graham ; Heonjoon Park ; Paul V. Nguyen ; James Nunn ; Viktor Kandyba ; Mattia Cattelan ; Alessio Giampietri ; Alexei Barinov ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Anton Andreev ; Mark Rudner ; Xiaodong Xu ; Neil R. Wilson ; David H. Cobden

2024A00491G_Cobden Nano Lett.pdf
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Abigail J. Graham, Heonjoon Park, Paul V. Nguyen, James Nunn, Viktor Kandyba, Mattia Cattelan, Alessio Giampietri, Alexei Barinov, Kenji Watanabe, Takashi Taniguchi, Anton Andreev, Mark Rudner, Xiaodong Xu, Neil R. Wilson, David H. Cobden. Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer. Nano Letters. 2024, 24 (17), 5117-5124. https://doi.org/10.1021/acs.nanolett.3c04866

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(abstract)

Stacking monolayer semiconductors creates moiré patterns, leading to correlated and topological electronic phenomena, but measurements of the electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers of WS2/WSe2 using submicrometer angle-resolved photoemission spectroscopy with electrostatic gating. We find that at all twist angles the conduction band edge is the K-point valley of the WS2, with a band gap of 1.58 ± 0.03 eV. From the resolved conduction band dispersion, we deduce an effective mass of 0.15 ± 0.02 me. Additionally, we observe replicas of the conduction band displaced by reciprocal lattice vectors of the moiré superlattice. We argue that the replicas result from the moiré potential modifying the conduction band states rather than final-state diffraction. Interestingly, the replicas display an intensity pattern with reduced 3-fold symmetry, which we show implicates the pseudo vector potential associated with in-plane strain in moiré band formation.

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  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c04866.

Keyword: Two-Dimensional Materials, Two-Dimensional Heterostructures, Two-Dimensional Semiconductors, Angle-Resolved Photoemission Spectroscopy

Date published: 2024-05-01

Publisher: American Chemical Society (ACS)

Journal:

  • Nano Letters (ISSN: 15306984) vol. 24 issue. 17 p. 5117-5124

Funding:

  • Energy Frontier Research Centers DE-SC0018171
  • Energy Frontier Research Centers DE-SC0019443
  • Engineering and Physical Sciences Research Council EP/P01139X/1
  • Engineering and Physical Sciences Research Council EP/T027207/1
  • Ministry of Education, Culture, Sports, Science and Technology
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 23H02052

Manuscript type: Author's version (Accepted manuscript)

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First published URL: https://doi.org/10.1021/acs.nanolett.3c04866

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Updated at: 2025-07-28 12:30:20 +0900

Published on MDR: 2025-07-28 12:17:08 +0900

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