論文 Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer

Abigail J. Graham ; Heonjoon Park ; Paul V. Nguyen ; James Nunn ; Viktor Kandyba ; Mattia Cattelan ; Alessio Giampietri ; Alexei Barinov ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Anton Andreev ; Mark Rudner ; Xiaodong Xu ; Neil R. Wilson ; David H. Cobden

コレクション

引用
Abigail J. Graham, Heonjoon Park, Paul V. Nguyen, James Nunn, Viktor Kandyba, Mattia Cattelan, Alessio Giampietri, Alexei Barinov, Kenji Watanabe, Takashi Taniguchi, Anton Andreev, Mark Rudner, Xiaodong Xu, Neil R. Wilson, David H. Cobden. Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer. Nano Letters. 2024, 24 (17), 5117-5124. https://doi.org/10.1021/acs.nanolett.3c04866

説明:

(abstract)

Stacking monolayer semiconductors creates moiré patterns, leading to correlated and topological electronic phenomena, but measurements of the electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers of WS2/WSe2 using submicrometer angle-resolved photoemission spectroscopy with electrostatic gating. We find that at all twist angles the conduction band edge is the K-point valley of the WS2, with a band gap of 1.58 ± 0.03 eV. From the resolved conduction band dispersion, we deduce an effective mass of 0.15 ± 0.02 me. Additionally, we observe replicas of the conduction band displaced by reciprocal lattice vectors of the moiré superlattice. We argue that the replicas result from the moiré potential modifying the conduction band states rather than final-state diffraction. Interestingly, the replicas display an intensity pattern with reduced 3-fold symmetry, which we show implicates the pseudo vector potential associated with in-plane strain in moiré band formation.

権利情報:

  • In Copyright
    This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c04866.

キーワード: Two-Dimensional Materials, Two-Dimensional Heterostructures, Two-Dimensional Semiconductors, Angle-Resolved Photoemission Spectroscopy

刊行年月日: 2024-05-01

出版者: American Chemical Society (ACS)

掲載誌:

  • Nano Letters (ISSN: 15306984) vol. 24 issue. 17 p. 5117-5124

研究助成金:

  • Energy Frontier Research Centers DE-SC0018171
  • Energy Frontier Research Centers DE-SC0019443
  • Engineering and Physical Sciences Research Council EP/P01139X/1
  • Engineering and Physical Sciences Research Council EP/T027207/1
  • Ministry of Education, Culture, Sports, Science and Technology
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 23H02052

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.3c04866

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更新時刻: 2025-07-28 12:30:20 +0900

MDRでの公開時刻: 2025-07-28 12:17:08 +0900

ファイル名 サイズ
ファイル名 2024A00491G_Cobden Nano Lett.pdf (サムネイル)
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ファイル名 2024A00491G_Cobden Nano Lett SI.pdf
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