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説明:

We introduce a peak fitting method to estimate the model parameters and the number of peaks without using the conventional trial-and-error approach. The proposed method automatically removes excess peaks using maximum a posteriori estimation. The computation is performed efficiently by the spectrum-adapted expectation–conditional maximisation algorithm with deterministic annealing. We apply the proposed method to synthetic and experimental data from a tunnel field-effect transistor. The proposed method identified two peak components in the experimental data from a MoS2 sheet, which are interpreted to be the Mo 3d3/2 and Mo 3d5/2 peaks. No peaks were detected on the p-WSe2 sheet and hexagonal boron nitride (h-BN) within the measured binding energy range.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: High-throughput analysis, Peak fitting, X-ray photoelectron spectroscopy, Maximum a posteriori estimation, Expectation– conditional maximisation algorithm

刊行年月日: 2024-12-31

出版者: Informa UK Limited

掲載誌:

• Science and Technology of Advanced Materials: Methods (ISSN: 27660400) vol. 4 issue. 1 p. 1-15 2373046

研究助成金:

• Core Research for Evolutional Science and Technology JPMJCR1761
• JST-Mirai Program JPMJMI21G2
• Japan Society for the Promotion of Science 21H01638
• New Energy and Industrial Technology Development Organization P16010
• Research Program for CORE lab 2016002
• Acquisition, Technology & Logistics Agency JPJ004596
• Precursory Research for Embryonic Science and Technology JPMJPR17NB

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1080/27660400.2024.2373046

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更新時刻: 2024-12-10 16:30:32 +0900

MDRでの公開時刻: 2024-12-10 16:30:32 +0900