Tarojiro Matsumura
;
Naoka Nagamura
(National Institute for Materials Science)
;
Shotaro Akaho
;
Kenji Nagata
(National Institute for Materials Science)
;
Yasunobu Ando
Description:
(abstract)We introduce a peak fitting method to estimate the model parameters and the number of peaks without using the conventional trial-and-error approach. The proposed method automatically removes excess peaks using maximum a posteriori estimation. The computation is performed efficiently by the spectrum-adapted expectation–conditional maximisation algorithm with deterministic annealing. We apply the proposed method to synthetic and experimental data from a tunnel field-effect transistor. The proposed method identified two peak components in the experimental data from a MoS2 sheet, which are interpreted to be the Mo 3d3/2 and Mo 3d5/2 peaks. No peaks were detected on the p-WSe2 sheet and hexagonal boron nitride (h-BN) within the measured binding energy range.
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Keyword: High-throughput analysis, Peak fitting, X-ray photoelectron spectroscopy, Maximum a posteriori estimation, Expectation– conditional maximisation algorithm
Date published: 2024-12-31
Publisher: Informa UK Limited
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1080/27660400.2024.2373046
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Updated at: 2024-12-10 16:30:32 +0900
Published on MDR: 2024-12-10 16:30:32 +0900
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