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説明:

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K-1T-1 at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low- temperature emergent phenomena.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Nernst effect, graphene, indium selenide

刊行年月日: 2024-07-02

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Nanotechnology (ISSN: 17483387) vol. 19 issue. 7 p. 941-947

研究助成金:

• MEXT | Japan Society for the Promotion of Science JP19H05790
• MEXT | Japan Society for the Promotion of Science JP20H00354

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41565-024-01717-y

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更新時刻: 2025-02-05 12:31:38 +0900

MDRでの公開時刻: 2025-02-05 12:31:38 +0900