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The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K-1T-1 at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low- temperature emergent phenomena.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Nernst effect, graphene, indium selenide

Date published: 2024-07-02

Publisher: Springer Science and Business Media LLC

Journal:

• Nature Nanotechnology (ISSN: 17483387) vol. 19 issue. 7 p. 941-947

Funding:

• MEXT | Japan Society for the Promotion of Science JP19H05790
• MEXT | Japan Society for the Promotion of Science JP20H00354

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41565-024-01717-y

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Updated at: 2025-02-05 12:31:38 +0900

Published on MDR: 2025-02-05 12:31:38 +0900