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説明:

III-V nitride semiconductors have been characterized by photothermal deflection spectroscopy (PDS) which can provide the information of non-radiative recombination involving defect levels. After understanding the challenges of applying PDS to materials emitting light, the advantages and features of PDS were described for evaluating the defects level in the band gap. The reciprocal of the slope of the PDS spectrum near the bandgap energy (Urbach-like energy) increased with increasing indium composition in InGaN film. With an increase of the Urbach-like energy, the radial distribution determined by x-ray absorption fine structure was likely to be decreased. This was possibly attributed to the random aggregation of In atoms in InGaN film. Also, it was proposed that the Urbach-like energy may be considered when the in-gap emission caused by defects was discussed.

権利情報:

• In Copyright
  This is the version of the article before peer review or editing, as submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/ace3cf

キーワード: III-V nitride semiconductor, photothermal deflection spectroscopy, defect

刊行年月日: 2023-11-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 62 issue. SN SN1007

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5132

公開URL: https://doi.org/10.35848/1347-4065/ace3cf

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更新時刻: 2024-12-10 16:56:31 +0900

MDRでの公開時刻: 2024-12-10 16:56:31 +0900