Journal article Observation of Boron Vacancy Concentration in Hexagonal Boron Nitride at Nanometer Scale
Jun Kikkawa (author) (Search by this author)
ORCID https://orcid.org/0000-0003-0659-1844
Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group, National Institute for Materials Science
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Chikara Shinei (author) (Search by this author)
ORCID https://orcid.org/0000-0003-4926-8641
Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials Science
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Jun Chen (author) (Search by this author)
ORCID https://orcid.org/0000-0003-4272-2653
Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials Science
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Yuta Masuyama (author) (Search by this author)
National Institutes for Quantum Science and Technology
;
Yuichi Yamazaki (author) (Search by this author)
National Institutes for Quantum Science and Technology
;
Teruyasu Mizoguchi (author) (Search by this author)
Univ. Tokyo, Institute for Industrial Science
;
Koji Kimoto (author) (Search by this author)
ORCID https://orcid.org/0000-0002-3927-0492
Center for Basic Research on Materials, National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)
ORCID https://orcid.org/0000-0002-1467-3105
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
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Tokuyuki Teraji (author) (Search by this author)
ORCID https://orcid.org/0000-0002-7731-0547
Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials Science
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kikkawa-et-al-2025-observation-of-boron-vacancy-concentration-in-hexagonal-boron-nitride-at-nanometer-scale.pdf
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Citation
Jun Kikkawa, Chikara Shinei, Jun Chen, Yuta Masuyama, Yuichi Yamazaki, Teruyasu Mizoguchi, Koji Kimoto, Takashi Taniguchi, Tokuyuki Teraji. Observation of Boron Vacancy Concentration in Hexagonal Boron Nitride at Nanometer Scale. NANO LETTERS. 2025, (), . https://doi.org/10.1021/acs.nanolett.5c02988

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(abstract)

Negatively charged boron vacancy (NV-) ensembles in hexagonal boron nitride (h-BN) have attracted considerable attention as a promising platform for quantum sensing. Current challenges include the experimental validation of the spatial distribution and electronic states of optically active VB- and optically inactive neutral boron vacancy VB0 defects. To address these issues, we employ electron energy loss spectroscopy (EELS) combined with scanning transmission electron microscopy (STEM) using monochromated 30-keV electrons, effectively reducing background interference. This approach unveils distinct spectral peaks at 2.5 and 1.9 eV, corresponding to VB- and VB0 defects, respectively. Furthermore, we achieve nanometer-scale concentration mapping for VB- and VB0 defects, advancing insights into spin defect configurations crucial for optimizing quantum sensor performance.

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Keyword: hexagonal boronnitride, boron vacancy, electron energy loss spectroscopy, scanning transmission electron microscopy, frist-principles simulation

Date published: 2025-09-03

Publisher: American Chemical Society

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Funding:

  • 日本学術振興会 JP22H01959
  • 日本学術振興会 JP23H02052

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1021/acs.nanolett.5c02988

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Updated at: 2025-09-08 13:41:17 +0900

Published on MDR: 2025-08-27 16:18:56 +0900

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